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PRODUCTION OF INDIUM ANTIMONID (InSb) NANO WIRES BY USING ELECTROLYTHIC ALLOY PLATING METHOD Indium Antimonid (InSb) is a well known electro-optical material and represents high quantum efficiency and sensitivity for infrared detector applications. InSb detectors have to be used at liquid nitrogen temperature. This means complex and heavy devices are needed to operate an InSb IR detector. One dimensional semi-conductor crystals represents different electrical and optical properties then 3 D crystals. InSb quantum wires promises high quantum efficiency and sensitivity for higher temperature operating IR detectors. There are several methods to fabricate InSb nano wires. Using anodized alumina templates is a cost effective and easily applicable method to produce highly ordered semi-conductor nano wires. In this study InSb alloy was growth in nano porous anodized alümina templates. Dimensions of semiconductor nano wires were designated before plating while anodization process of the aluminum. Wires with 100nm-10nm diameter were fabricated. Produced nano-wires are characterized by taking SEM images from surfaces and cross-section images. The atomic ratio of In/Sb on the film was determined by EDS analysis and FT-IR spectrums were obtained and used to find band gap of semiconductor. In the second stage of the experimental studies, disc and cylindrical shaped glass samples were cast. After heat treatment, microstructure and mechanical properties were determined in terms of micro hardness (Hv) and machinability. Machinability test was applied by drilling. After machinability tests, chemical resistances of produced materials were determined. As a result of experimental studies, it was determined that TiO2 addition promotes cordierite formation. In these glass compositions curved mica that provides machinability precipitated in glass base matrix and cordierite phase that provides hardness and chemical resistance precipitated in boundaries between mica crystals. It was observed that TiO2 addition of 1% and above reduces porosity, thus increasing both hardness and chemical resistance. Addition of 1% or more TiO2 also resulted in very high dielectric constant values. |
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